?2014 fairchild semiconductor corporation 1 www.fairchildsemi.com FGH40T65SHDF rev. c1 FGH40T65SHDF 650 v, 40 a field stop trench igbt may 2014 FGH40T65SHDF 650 v, 40 a field stop trench igbt features ? maximum junction temperature : t j = 175 o c ? positive temperaure co-efficient for easy parallel operating ? high current capability ? low saturation voltage: v ce(sat) = 1.45 v ( typ.) @ i c = 40 a ? 100% of the parts tested for i lm (1) ? high input impedance ? fast switching ? tighten parameter distribution ? rohs compliant general description using novel field stop igbt technology, fairchilds new series of field stop 3 rd generation igbts offer superior conduction and switching performance and easy parallel operation. this device is well suited for the resonant or soft switching a pplication such as induction heating and mwo. applications ? induction heating, mwo absolute maximum ratings notes: 1. v cc = 400 v, v ge = 15 v, i c = 120 a, r g = 30 , inductive load 2. repetitive rating: pulse width limited by max. j unction temperature symbol description FGH40T65SHDF_f155 unit v ces collector to emitter voltage 650 v v ges gate to emitter voltage 20 v transient gate to emitter voltage 30 v i c collector current @ t c = 25 o c 80 a collector current @ t c = 100 o c 40 a i lm (1) pulsed collector current @ t c = 25 o c 120 a i cm (2) pulsed collector current 120 a i f diode forward current @ t c = 25 o c 40 a diode forward current @ t c = 100 o c 20 a i fm pulsed diode maximum forward current 60 a p d maximum power dissipation @ t c = 25 o c 268 w maximum power dissipation @ t c = 100 o c 134 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 o c g e c e c g collector (flange)
FGH40T65SHDF 650 v, 40 a field stop trench igbt ?2014 fairchild semiconductor corporation 2 www.fairchildsemi.com fgh40t65sphdf rev. c1 thermal characteristics package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted symbol parameter FGH40T65SHDF_f155 unit r jc (igbt) thermal resistance, junction to case, max. 0.5 6 o c / w r jc (diode) thermal resistance, junction to case, max. 1. 75 o c / w r ja thermal resistance, junction to ambient, max. 40 o c / w device marking device package reel size tape width qty p er tube FGH40T65SHDF FGH40T65SHDF_f155 to-247 g03 - - 30 symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0 v, i c = 1 ma 650 - - v ? bv ces ? t j temperature coefficient of breakdown voltage v ge = 0 v, i c = 1 ma - 0.6 - v/ o c i ces collector cut-off current v ce = v ces , v ge = 0 v - - 250 a i ges g-e leakage current v ge = v ges , v ce = 0 v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 40 ma, v ce = v ge 3.5 5.5 7.5 v v ce(sat) collector to emitter saturation voltage i c = 40 a , v ge = 15 v - 1.45 1.81 v i c = 40 a , v ge = 15 v, t c = 175 o c - 1.8 - v dynamic characteristics c ies input capacitance v ce = 30 v , v ge = 0 v, f = 1 mhz - 1982 - pf c oes output capacitance - 70 - pf c res reverse transfer capacitance - 25 - pf switching characteristics t d(on) turn-on delay time v cc = 400 v, i c = 40 a, r g = 6 , v ge = 15 v, inductive load, t c = 25 o c - 18 - ns t r rise time - 27 - ns t d(off) turn-off delay time - 64 - ns t f fall time - 3 - ns e on turn-on switching loss - 1.22 - mj e off turn-off switching loss - 0.44 - mj e ts total switching loss - 1.66 - mj t d(on) turn-on delay time v cc = 400 v, i c = 40 a, r g = 6 , v ge = 15 v, inductive load, t c = 175 o c - 18 - ns t r rise time - 31 - ns t d(off) turn-off delay time - 70 - ns t f fall time - 56 - ns e on turn-on switching loss - 1.78 - mj e off turn-off switching loss - 0.78 - mj e ts total switching loss - 2.56 - mj
FGH40T65SHDF 650 v, 40 a field stop trench igbt ?2014 fairchild semiconductor corporation 3 www.fairchildsemi.com FGH40T65SHDF rev. c1 electrical characteristics of the igbt (continued) electrical characteristics of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. unit q g total gate charge v ce = 400 v, i c = 40 a, v ge = 15 v - 68 - nc q ge gate to emitter charge - 12 - nc q gc gate to collector charge - 25 - nc symbol parameter test conditions min. typ. max. unit v fm diode forward voltage i f = 20 a t c = 25 o c - 1.5 1.95 v t c = 175 o c - 1.37 - e rec reverse recovery energy i f = 20 a, di f /dt = 200 a/ s t c = 175 o c - 153 - j t rr diode reverse recovery time t c = 25 o c - 101 - ns t c = 175 o c - 238 - q rr diode reverse recovery charge t c = 25 o c - 343 - nc t c = 175 o c - 1493 -
FGH40T65SHDF 650 v, 40 a field stop trench igbt ?2014 fairchild semiconductor corporation 4 www.fairchildsemi.com fgh40t65sphdf rev. c1 typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. saturation voltage vs. case characteristics temperature at variant current level figure 5. saturation voltage vs. v ge figure 6. saturation voltage vs. v ge 0 1 2 3 4 5 6 0 30 60 90 120 20 v t c = 175 o c 15 v 12 v 10 v v ge = 8 v collector current, i c [a] collector-emitter voltage, v ce [v] 0 1 2 3 4 5 6 0 20 40 60 80 100 120 20 v t c = 25 o c 15 v 12 v 10 v v ge = 8 v collector current, i c [a] collector-emitter voltage, v ce [v] -100 -50 0 50 100 150 200 1 2 3 80 a 40 a i c = 20 a common emitter v ge = 15 v collector-emitter voltage, v ce [v] case temperature, t c [ o c] 0 1 2 3 4 0 30 60 90 120 common emitter v ge = 15 v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 4 8 12 16 20 0 4 8 12 16 20 i c = 20 a 40 a 80 a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 80 a i c = 20 a 40 a common emitter t c = 175 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v]
FGH40T65SHDF 650 v, 40 a field stop trench igbt ?2014 fairchild semiconductor corporation 5 www.fairchildsemi.com fgh40t65sphdf rev. c1 typical performance characteristics figure 7. capacitance characteristics figure 8. gate charge characteristics figure 9. turn-on characteristics vs. figure 10. turn-off characteristics vs. gate resistance gate resi stance figure 11. switching loss vs. figure 12. turn-on characteristics v s. gate resistance collector current 1 10 10 100 1000 10000 common emitter v ge = 0 v, f = 1 mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 20 40 60 80 0 3 6 9 12 15 common emitter t c = 25 o c 300 v 400 v v cc = 200 v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0 10 20 30 40 50 5 10 100 common emitter v cc = 400 v, v ge = 15 v i c = 40 a t c = 25 o c t c = 175 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 0 10 20 30 40 50 1 10 100 1000 common emitter v cc = 400 v, v ge = 15 v i c = 40 a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 0 10 20 30 40 50 100 1000 5000 common emitter v cc = 400 v, v ge = 15 v i c = 40 a t c = 25 o c t c = 175 o c e on e off switching loss [uj] gate resistance, r g [ ? ] 20 40 60 80 5 10 100 common emitter v ge = 15 v, r g = 6 t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a]
FGH40T65SHDF 650 v, 40 a field stop trench igbt ?2014 fairchild semiconductor corporation 6 www.fairchildsemi.com fgh40t65sphdf rev. c1 typical performance characteristics figure 13. turn-off characteristics vs. figure 14. switching loss vs. collector current collector current figure 15. load current vs. frequency figure 16. soa characteristics figure 17. forward characteristics figure 18. reverse recovery current 20 40 60 80 1 10 100 200 common emitter v ge = 15 v, r g = 6 t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [a] 20 40 60 80 100 1000 10000 common emitter v ge = 15 v, r g = 6 t c = 25 o c t c = 175 o c e on e off switching loss [uj] collector current, i c [a] 1 10 100 1000 0.1 1 10 100 300 1 ms 10 ms dc *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse 10 s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v] 1k 10k 100k 1m 0 50 100 150 200 250 t c = 75 o c t c = 25 o c t c = 100 o c square wave t j <= 175 o c, d = 0.5, v ce = 400v v ge = 15/0 v, r g = 6 collector current, [a] switching frequency, f[hz] 0 1 2 3 1 10 80 t j = 75 o c t j = 25 o c t c = 25 o c t c = 75 o c t c = 175 o c t j = 175 o c forward voltage, v f [v] forward current, i f [a] 0 10 20 30 40 50 0 3 6 9 12 15 t c = 25 o c t c = 175 o c di/dt = 100 a/ ? s di/dt = 200 a/ ? s di/dt = 100 a/ ? s di/dt = 200 a/ ? s reverse recovery currnet, i rr [a] forward current, i f [a]
FGH40T65SHDF 650 v, 40 a field stop trench igbt ?2014 fairchild semiconductor corporation 7 www.fairchildsemi.com fgh40t65sphdf rev. c1 typical performance characteristics figure 19. reverse recovery time figure 20. stored charge figure 21. transient thermal impedance of igbt figure 22. transient thermal impedance of diode 0 10 20 30 40 0 100 200 300 400 500 t c = 25 o c t c = 175 o c --- di/dt = 200 a/ ? s di/dt = 100 a/ ? s reverse recovery time, t rr [ns] forward current, i f [a] 0 10 20 30 40 0 500 1000 1500 2000 t c = 25 o c t c = 175 o c di/dt = 200 a/ ? s di/dt = 100 a/ ? s stored recovery charge, q rr [nc] forward current, i f [a] 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 1e-3 0.01 0.1 1 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 1e-3 0.01 0.1 1 5 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGH40T65SHDF 650 v, 40 a field stop trench igbt ?2014 fairchild semiconductor corporation 8 www.fairchildsemi.com fgh40t65sphdf rev. c1 mechanical dimensions figure 23. to-247 3l - to-247,molded,3 leads,jedec ab long leads package drawings are provided as a service to custo mers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or dat e on the drawing and contact a fairchild semiconduc tor representative to verify or obtain the most recent revision. package specificat ions do not expand the terms of fairchilds worldwi de terms and conditions, specif- ically the warranty therein, which covers fairchild products. always visit fairchild semiconductors online packa ging area for the most recent package drawings: http://www.fairchildsemi.com/package/packagedetails .html?id=pn_to247-0a3
FGH40T65SHDF 650 v, 40 a field stop trench igbt ?2014 fairchild semiconductor corporation 9 www.fairchildsemi.com FGH40T65SHDF rev. c1 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild se miconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trade marks. *trademarks of system general corporation, used un der license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products here in to improve reliability, function, or design. fairchild does no t assume any liability arising out of the applicati on or use of any product or circuit described herein; neither does i t convey any license under its patent rights, nor t he rights of others. these specifications do not expand the terms of fai rchilds worldwide terms and conditions, specifical ly the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or syst ems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the u ser. 2. a critical component in any component of a life s upport, device, or system whose failure to perform can be reasonably e xpected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. product status definitions definition of terms accupower? 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